Fabrication of Graphene Field Effect Transistors on Boron Nitride Substrates
نویسنده
چکیده
Graphene is a two dimensional crystal of carbon atoms that has applications to new electronics and optoelectronics when fabricated as a field effect transistor (FET) [1]. The quality of these FETs is quantified partly by the carrier mobility of the device. The goal of this project is to determine a procedure for fabricating graphene FETs on hexagonal boron nitride (h-BN) substrates based on Dean et al. [2] in order to create devices with improved carrier mobility. A combination of chemical solvents and annealing procedures were used to clean the devices during fabrication. We found that only applying the chemical solvents yielded the devices with the highest carrier mobility (~ 500 cm2/Vs). However, this value is much less than that of typical graphene FETs, indicating our procedure can still be improved.
منابع مشابه
Flexible Graphene Field-Effect Transistors Encapsulated in Hexagonal Boron Nitride.
Flexible graphene field-effect transistors (GFETs) are fabricated with graphene channels fully encapsulated in hexagonal boron nitride (hBN) implementing a self-aligned fabrication scheme. Flexible GFETs fabricated with channel lengths of 2 μm demonstrate exceptional room-temperature carrier mobility (μFE = 10 000 cm(2) V(-1) s(-1)), strong current saturation characteristics (peak output resist...
متن کاملContinuous growth of hexagonal graphene and boron nitride in-plane heterostructures by atmospheric pressure chemical vapor deposition.
Graphene-boron nitride monolayer heterostructures contain adjacent electrically active and insulating regions in a continuous, single-atom thick layer. To date structures were grown at low pressure, resulting in irregular shapes and edge direction, so studies of the graphene-boron nitride interface were restricted to the microscopy of nanodomains. Here we report templated growth of single cryst...
متن کاملTunneling characteristics in chemical vapor deposited graphene – hexagonal boron nitride – graphene junctions
Large area chemical vapor deposited graphene and hexagonal boron nitride was used to fabricate graphene – hexagonal boron nitride – graphene symmetric field effect transistors. Gate control of the tunneling characteristics is observed similar to previously reported results for exfoliated graphene – hexagonal boron nitride – graphene devices. Density-of-states features are observed in the tunnel...
متن کاملTunneling characteristics in chemical vapor deposited grapheneâ•fihexagonal boron nitrideâ•figraphene junctions
Large area chemical vapor deposited graphene and hexagonal boron nitride was used to fabricate graphene – hexagonal boron nitride – graphene symmetric field effect transistors. Gate control of the tunneling characteristics is observed similar to previously reported results for exfoliated graphene – hexagonal boron nitride – graphene devices. Density-of-states features are observed in the tunnel...
متن کاملFlexible and transparent MoS2 field-effect transistors on hexagonal boron nitride-graphene heterostructures.
Atomically thin forms of layered materials, such as conducting graphene, insulating hexagonal boron nitride (hBN), and semiconducting molybdenum disulfide (MoS2), have generated great interests recently due to the possibility of combining diverse atomic layers by mechanical "stacking" to create novel materials and devices. In this work, we demonstrate field-effect transistors (FETs) with MoS2 c...
متن کامل